Modification of Silicon Nanostructures by Cold Atmospheric Pressure Plasma Jets

نویسندگان

چکیده

Cold atmospheric plasma (CAP) jets with helium (He) and argon (Ar) plasma-forming gases were used to modify the structure, photoluminescence (PL), electrical properties of arrays silicon nanowires (SiNWs) initial cross-section sizes order 100 nm length about 7‒8 microns. The CAP source consisted a 30 kHz voltage generator full power up 5 W treatment for 1‒5 min resulted in spattering SiNWs’ tips followed by redeposition atoms. An increase oxide phase decrease PL intensity observed processed SiNW arrays. A free hole concentration an electron density revealed heavily boron phosphorous doped SiNWs, respectively, as it was monitored means Raman spectroscopy, considering coupling light scattering phonon charge carriers (Fano effect) SiNWs. obtained results demonstrate that can be change length, sharpness, luminescence intensity, possible applications optoelectronics sensorics.

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ژورنال

عنوان ژورنال: Eurasian Chemico-Technological Journal

سال: 2023

ISSN: ['1562-3920', '2522-4867']

DOI: https://doi.org/10.18321/ectj1497